Selective Area Growth of GaN Directly on (0001) Sapphire by...

MRS Internet Journal of Nitride Semiconductor Research 1998 Vol. 3

Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique

Singh, Raj, Barrett, Richard J., Gomes, John J., Dabkowski, Ferdynand P., Moustakas, T.D.
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Volume:
3
Year:
1998
Language:
english
Journal:
MRS Internet Journal of Nitride Semiconductor Research
DOI:
10.1557/S1092578300000855
File:
PDF, 263 KB
english, 1998
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