![](/img/cover-not-exists.png)
Electron energy dissipation model of gate dielectric progressive breakdown in n- and p-channel field effect transistors
Lombardo, S., Wu, E. Y., Stathis, J. H.Volume:
122
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4985794
Date:
August, 2017
File:
PDF, 1.18 MB
english, 2017