Performance comparison of Si, III–V double-gate n-type...

Performance comparison of Si, III–V double-gate n-type MOSFETs by deterministic Boltzmann transport equation solver

Di, Shaoyan, Shen, Lei, Chang, Pengying, Zhao, Kai, Lu, Tiao, Du, Gang, Liu, Xiaoyan
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Volume:
56
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.56.04CD08
Date:
April, 2017
File:
PDF, 948 KB
english, 2017
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