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Improved hysteresis in a normally-off AlGaN/GaN MOS heterojunction field-effect transistor with a recessed gate structure formed by selective regrowth
Nakazawa, Satoshi, Shiozaki, Nanako, Negoro, Noboru, Tsurumi, Naohiro, Anda, Yoshiharu, Ishida, Masahiro, Ueda, TetsuzoVolume:
56
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.56.091003
Date:
September, 2017
File:
PDF, 1.18 MB
english, 2017