28 nm CMOS Process ESD Protection based on Diode-Triggered...

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Solid-State Electronics 2017 / 8

28 nm CMOS Process ESD Protection based on Diode-Triggered Silicon Controlled Rectifier

Li, Xiang, Dong, Shurong, Jin, Hao, Miao, Meng, Hu, Tao, Guo, Wei, Wong, Hei
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Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2017.07.012
Date:
August, 2017
File:
PDF, 938 KB
english, 2017
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