Room-temperature deposition of HfN x barrier by radical-assisted surface reaction for through-silicon-via in three-dimensional LSI
Sato, Masaru, Takeyama, Mayumi B., Noya, AtsushiVolume:
55
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.55.02BC21
Date:
February, 2016
File:
PDF, 566 KB
english, 2016