High-voltage MIS-gated GaN transistors

Semiconductors 2017 / 9 Vol. 51; Iss. 9

High-voltage MIS-gated GaN transistors

Erofeev, E. V., Fedin, I. V., Fedina, V. V., Stepanenko, M. V., Yuryeva, A. V.
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Volume:
51
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S106378261709010X
Date:
September, 2017
File:
PDF, 352 KB
english, 2017
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