Reduction in number of crystal defects in a p...

Reduction in number of crystal defects in a p + Si diffusion layer by germanium and boron cryogenic implantation combined with sub-melt laser spike annealing

Murakoshi, Atsushi, Harada, Tsubasa, Miyano, Kiyotaka, Harakawa, Hideaki, Aoyama, Tomonori, Yamashita, Hirofumi, Kohyama, Yusuke
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Volume:
56
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.56.095503
Date:
September, 2017
File:
PDF, 1.87 MB
english, 2017
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