[IEEE 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - Sapporo, Japan (2017.5.28-2017.6.1)] 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - Transient overvoltage induced failure of MOS-controlled thyristor under ultra-high di/dt condition
Liu, Chao, Chen, Wanjun, Tao, Hong, Shi, Yijun, Tang, Xuefeng, Gao, Wuhao, Zhou, Qi, Li, Zhaoji, Zhang, BoYear:
2017
DOI:
10.23919/ISPSD.2017.7988930
File:
PDF, 972 KB
2017