4H Silicon Carbide Etching Using Chlorine Trifluoride Gas

Materials Science Forum 2009 Vol. 600-603

4H Silicon Carbide Etching Using Chlorine Trifluoride Gas

Habuka, Hitoshi, Katsumi, Yusuke, Miura, Yutaka, Tanaka, Keiko, Fukai, Yasushi, Fukae, Takaya, Gao, Yuan, Kato, Tomohisa, Okumura, Hajime, Arai, Kazuo
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Volume:
600-603
Year:
2009
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.600-603.655
File:
PDF, 2.47 MB
english, 2009
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