The preferred orientation of silicon films grown by Lpcvd...

Journal of Materials Science Letters 1988 / 03 Vol. 7; Iss. 3

The preferred orientation of silicon films grown by Lpcvd at relatively low temperatures

Th. Karakostas, D. Meakin, P. Migliorato, J. Stoemenos, N. A. Economou
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Volume:
7
Language:
english
Pages:
4
DOI:
10.1007/bf01730186
Date:
March, 1988
File:
PDF, 888 KB
english, 1988
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