444 nm InGaN light emitting diodes on low-defect-density...

Applied Physics Express 2017 / 10 Vol. 10; Iss. 10

444 nm InGaN light emitting diodes on low-defect-density $(11\bar{2}2)$ GaN templates on patterned sapphire

Khoury, Michel, Li, Hongjian, Kuritzky, Leah Y., Mughal, Asad J., DeMierry, Philippe, Nakamura, Shuji, Speck, James S., DenBaars, Steven P.
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Volume:
10
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/APEX.10.106501
Date:
October, 2017
File:
PDF, 5.36 MB
english, 2017
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