Formation of crystalline heteroepitaxial SiC films on Si by...

Japanese Journal of Applied Physics 2017 / 06 Vol. 56; Iss. 6S1

Formation of crystalline heteroepitaxial SiC films on Si by carbonization of polyimide Langmuir–Blodgett films

Luchinin, Viktor V., Goloudina, Svetlana I., Pasyuta, Vyacheslav M., Panov, Mikhail F., Smirnov, Alexander N., Kirilenko, Demid A., Semenova, Tatyana F., Sklizkova, Valentina P., Gofman, Iosif V., Sve
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Volume:
56
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.56.06GH08
Date:
June, 2017
File:
PDF, 1.50 MB
english, 2017
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