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[IEEE 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Hangzhou, China (2016.10.25-2016.10.28)] 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Simulation on threshold voltage of L-shaped bottom select transistor in 3D NAND flash memory
Zou, Xingqi, Zhiliang Xia,, Lei Jin,, Yu Zhang,, Dandan Jiang,, Dong Hua Li,, Qiang Xu,, Peizhen Hong,, Ming Zeng,, Jing Gao,, Zhaoyun Tang,, Shaoning Mei,, Zongliang Huo,Year:
2016
Language:
english
DOI:
10.1109/icsict.2016.7998670
File:
PDF, 4.90 MB
english, 2016