Study of 6T SRAM Cell using High- K Gate Dielectric based...

  • Main
  • 2017 / 9
  • Study of 6T SRAM Cell using High- K Gate Dielectric based...
Superlattices and Microstructures 2017 / 9

Study of 6T SRAM Cell using High- K Gate Dielectric based Junctionless Silicon Nanotube FET

Tayal, Shubham, Nandi, Ashutosh
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Language:
english
Journal:
Superlattices and Microstructures
DOI:
10.1016/j.spmi.2017.08.061
Date:
September, 2017
File:
PDF, 524 KB
english, 2017
Conversion to is in progress
Conversion to is failed