Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2015 / 05 Vol. 33; Iss. 3
Thickness modulation effects of Al 2 O 3 capping layers on device performance for the top-gate thin-film transistors using solution-processed poly(4-vinyl phenol)/Zn-Sn-O gate stacks
Kim, Kyeong-Ah, Bak, Jun-Yong, Yoon, Sung-Min, Kim, Seong Jip, Jeong, Sunho, Choi, Youngmin, Jung, Soon-WonVolume:
33
Language:
english
Journal:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
DOI:
10.1116/1.4916021
Date:
May, 2015
File:
PDF, 1.49 MB
english, 2015