![](/img/cover-not-exists.png)
[IEEE 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - Sapporo, Japan (2017.5.28-2017.6.1)] 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - Charge storage effect in SiC trench MOSFET with a floating p-shield and its impact on dynamic performances
Wei, Jin, Zhang, Meng, Jiang, Huaping, Wang, Hanxing, Chen, Kevin J.Year:
2017
DOI:
10.23919/ISPSD.2017.7988985
File:
PDF, 949 KB
2017