[IEEE 2017 29th International Symposium on Power...

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[IEEE 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - Sapporo, Japan (2017.5.28-2017.6.1)] 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - Suppression of charge accumulation on termination area of 4H-SiC power devices

Matsushima, Hiroyuki, Yamada, Renichi, Shima, Akio
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Year:
2017
DOI:
10.23919/ISPSD.2017.7988989
File:
PDF, 1.13 MB
2017
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