![](/img/cover-not-exists.png)
[IEEE 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - Sapporo, Japan (2017.5.28-2017.6.1)] 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - Suppression of charge accumulation on termination area of 4H-SiC power devices
Matsushima, Hiroyuki, Yamada, Renichi, Shima, AkioYear:
2017
DOI:
10.23919/ISPSD.2017.7988989
File:
PDF, 1.13 MB
2017