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AIP Conference Proceedings [AIP PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors - Rio de Janeiro (Brazil) (27 July–1 August 2009)] - Direct absorption edge in GeSiSn alloys
D’Costa, V. R., Fang, Y.-Y., Tolle, J., Kouvetakis, J., Menéndez, J., Caldas, Marília, Studart, NelsonYear:
2010
Language:
english
DOI:
10.1063/1.3295471
File:
PDF, 736 KB
english, 2010