Enhanced Intrinsic Voltage Gain in Artificially Stacked...

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Annalen der Physik 2017 / 09

Enhanced Intrinsic Voltage Gain in Artificially Stacked Bilayer CVD Graphene Field Effect Transistors

Pandey, Himadri, Aguirre-Morales, Jorge-Daniel, Kataria, Satender, Fregonese, Sebastien, Passi, Vikram, Iannazzo, Mario, Zimmer, Thomas, Alarcon, Eduard, Lemme, Max C.
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Language:
english
Journal:
Annalen der Physik
DOI:
10.1002/andp.201700106
Date:
September, 2017
File:
PDF, 1.64 MB
english, 2017
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