Absolute density of precursor SiH 3...

Applied Physics Letters 2017 / 01 Vol. 110; Iss. 4

Absolute density of precursor SiH 3 radicals and H atoms in H 2 -diluted SiH 4 gas plasma for deposition of microcrystalline silicon films

Abe, Yusuke, Ishikawa, Kenji, Takeda, Keigo, Tsutsumi, Takayoshi, Fukushima, Atsushi, Kondo, Hiroki, Sekine, Makoto, Hori, Masaru
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Volume:
110
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.4974821
Date:
January, 2017
File:
PDF, 709 KB
english, 2017
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