Halide vapor phase epitaxy of thick GaN films on ScAlMgO...

Applied Physics Express 2017 / 10 Vol. 10; Iss. 10

Halide vapor phase epitaxy of thick GaN films on ScAlMgO 4 substrates and their self-separation for fabricating freestanding wafers

Ohnishi, Kazuki, Kanoh, Masaya, Tanikawa, Tomoyuki, Kuboya, Shigeyuki, Mukai, Takashi, Matsuoka, Takashi
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Volume:
10
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/APEX.10.101001
Date:
October, 2017
File:
PDF, 826 KB
english, 2017
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