Normal and reverse defect annealing in ion implanted II-VI oxide semiconductors
Azarov, Alexander, Galeckas, Augustinas, Wendler, Elke, Ellingsen, Josef, Monakhov, Edouard, Svensson, Bengt G.Volume:
122
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4997847
Date:
September, 2017
File:
PDF, 1.66 MB
english, 2017