Degradation Characteristics of AlGaN/GaN...

ECS Journal of Solid State Science and Technology 2017 Vol. 6; Iss. 11

Degradation Characteristics of AlGaN/GaN MOS-Heterostructure FETs by Alpha-Particle Irradiation

Keum, Dongmin, Cho, Geunho, Kim, Hyungtak
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Volume:
6
Year:
2017
Language:
english
Journal:
ECS Journal of Solid State Science and Technology
DOI:
10.1149/2.0071711jss
File:
PDF, 617 KB
english, 2017
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