Comparison of iron-related recombination centers in boron,...

Energy Procedia 2017 / 09 Vol. 124

Comparison of iron-related recombination centers in boron, gallium, and indium doped silicon analyzed by defect parameter contour mapping

Nærland, Tine U., Bernardini, Simone, Stoddard, Nathan, Good, Ethan, Augusto, André, Bertoni, Mariana
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Volume:
124
Language:
english
Journal:
Energy Procedia
DOI:
10.1016/j.egypro.2017.09.321
Date:
September, 2017
File:
PDF, 1.12 MB
english, 2017
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