A Redox-Based Resistive Switching Memory Device Consisting...

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Advanced Electronic Materials 2017 / 10

A Redox-Based Resistive Switching Memory Device Consisting of Organic-Inorganic Hybrid Perovskite/Polymer Composite Thin Film

Ercan, Ender, Chen, Jung-Yao, Tsai, Ping-Chun, Lam, Jeun-Yan, Huang, Sophia Chao-Wei, Chueh, Chu-Chen, Chen, Wen-Chang
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Language:
english
Journal:
Advanced Electronic Materials
DOI:
10.1002/aelm.201700344
Date:
October, 2017
File:
PDF, 2.85 MB
english, 2017
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