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Highly improved performance in Zr0.5Hf0.5O2 films inserted by graphene oxide quantum dots layer for resistive switching nonvolatile memory
Yan, Xiaobing, Zhang, Lei, Yang, Yongqiang, Zhou, Zhenyu, Zhao, Jianhui, Zhang, Yuanyuan, Liu, Qi, Chen, Jing-shengYear:
2017
Language:
english
Journal:
J. Mater. Chem. C
DOI:
10.1039/c7tc03037a
File:
PDF, 1.93 MB
english, 2017