Very High Sustainable Forward Current Densities on 4H-SiC...

Materials Science Forum 2017 / 5 Vol. 897

Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p++ Emitters

Sejil, Selsabil, Lalouat, Loic, Lazar, Mihai, Carole, Davy, Brylinski, Christian, Jomard, François, Planson, Dominique, Ferro, Gabriel, Raynaud, Christophe
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Volume:
897
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.897.63
Date:
May, 2017
File:
PDF, 944 KB
english, 2017
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