![](/img/cover-not-exists.png)
Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p++ Emitters
Sejil, Selsabil, Lalouat, Loic, Lazar, Mihai, Carole, Davy, Brylinski, Christian, Jomard, François, Planson, Dominique, Ferro, Gabriel, Raynaud, ChristopheVolume:
897
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.897.63
Date:
May, 2017
File:
PDF, 944 KB
english, 2017