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High-Quality 100/150 mm p-Type 4H-SiC Epitaxial Wafer for High-Voltage Bipolar Devices
Ishibashi, Naoto, Fukada, Keisuke, Bandoh, Akira, Momose, Kenji, Osawa, HiroshiVolume:
897
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.897.55
Date:
May, 2017
File:
PDF, 633 KB
english, 2017