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Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS2 in Presence of Defects, Strain, and Charged Impurities
Dubey, Sudipta, Lisi, Simone, Nayak, Goutham, Herziger, Felix, Nguyen, Van-Dung, Le Quang, Toai, Cherkez, Vladimir, González, Cézar, Dappe, Yannick J., Watanabe, Kenji, Taniguchi, Takashi, Magaud, LauLanguage:
english
Journal:
ACS Nano
DOI:
10.1021/acsnano.7b05520
Date:
October, 2017
File:
PDF, 1.96 MB
english, 2017