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Charged defects in two-dimensional semiconductors of arbitrary thickness and geometry: Formulation and application to few-layer black phosphorus
Wang, Dan, Han, Dong, Li, Xian-Bin, Chen, Nian-Ke, West, Damien, Meunier, Vincent, Zhang, Shengbai, Sun, Hong-BoVolume:
96
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.96.155424
Date:
October, 2017
File:
PDF, 1.30 MB
english, 2017