Improvement of Ohmic contacts on Ga 2...

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2017 / 11 Vol. 35; Iss. 6

Improvement of Ohmic contacts on Ga 2 O 3 through use of ITO-interlayers

Carey, Patrick H., Yang, Jiancheng, Ren, Fan, Hays, David C., Pearton, Stephen J., Kuramata, Akito, Kravchenko, Ivan I.
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Volume:
35
Language:
english
Journal:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
DOI:
10.1116/1.4995816
Date:
November, 2017
File:
PDF, 855 KB
english, 2017
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