The structure of InAlGaN layers grown by metal organic vapour phase epitaxy: effects of threading dislocations and inversion domains from the GaN template
BEN AMMAR, H., MINJ, A., PIERRE-CHAUVAT, M., GAMARRA, P., LACAM, C., MORALES, M., RUTERANA, P.Language:
english
Journal:
Journal of Microscopy
DOI:
10.1111/jmi.12651
Date:
October, 2017
File:
PDF, 1.64 MB
english, 2017