Characterization of 0.18-μm gate length AlGaN/GaN HEMTs on...

Journal of the Korean Physical Society 2017 / 9 Vol. 71; Iss. 6

Characterization of 0.18-μm gate length AlGaN/GaN HEMTs on SiC fabricated using two-step gate recessing

Yoon, Hyung Sup, Min, Byoung-Gue, Lee, Jong Min, Kang, Dong Min, Ahn, Ho Kyun, Cho, Kyu-Jun, Do, Jae-Won, Shin, Min Jeong, Jung, Hyun-Wook, Kim, Sung Il, Kim, Hae Cheon, Lim, Jong Won
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Volume:
71
Language:
english
Journal:
Journal of the Korean Physical Society
DOI:
10.3938/jkps.71.360
Date:
September, 2017
File:
PDF, 661 KB
english, 2017
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