Influence of LDD spacers and H+ transport on the total-ionizing-dose response of 65 nm MOSFETs irradiated to ultra-high doses
Faccio, Federico, Borghello, Giulio, Lerario, Edoardo, Fleetwood, Daniel M., Schrimpf, Ronald D., Gong, Huiqi, Zhang, En Xia, Wang, P., Michelis, Stefano, Gerardin, Simone, Paccagnella, Alessandro, BoYear:
2017
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/TNS.2017.2760629
File:
PDF, 3.69 MB
english, 2017
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