Band-gap engineering of halogenated silicon nanowires...

Journal of Molecular Modeling 2017 / 11 Vol. 23; Iss. 11

Band-gap engineering of halogenated silicon nanowires through molecular doping

de Santiago, Francisco, Trejo, Alejandro, Miranda, Alvaro, Carvajal, Eliel, Pérez, Luis Antonio, Cruz-Irisson, Miguel
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Volume:
23
Language:
english
Journal:
Journal of Molecular Modeling
DOI:
10.1007/s00894-017-3484-8
Date:
November, 2017
File:
PDF, 3.14 MB
english, 2017
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