The electron trap parameter extraction-based investigation of the relationship between charge trapping and activation energy in IGZO TFTs under positive bias temperature stress
Rhee, Jihyun, Choi, Sungju, Kang, Hara, Kim, Jae-Young, Ko, Daehyun, Ahn, Geumho, Jung, Haesun, Choi, Sung-Jin, Myong Kim, Dong, Hwan Kim, DaeLanguage:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2017.10.024
Date:
October, 2017
File:
PDF, 898 KB
english, 2017