Improvement on p-type CVD diamond semiconducting properties by fabricating thin heavily-boron-doped multi-layer clusters isolated each other in unintentionally boron-doped diamond layer
Maida, Osamu, Tabuchi, Tomohiro, Ito, ToshimichiVolume:
480
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2017.10.008
Date:
December, 2017
File:
PDF, 608 KB
english, 2017