Trapping phenomena and degradation mechanisms in GaN-based power HEMTs
Meneghini, Matteo, Tajalli, Alaleh, Moens, Peter, Banerjee, Abhishek, Zanoni, Enrico, Meneghesso, GaudenzioLanguage:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2017.10.009
Date:
October, 2017
File:
PDF, 2.80 MB
english, 2017