Tuning of the work function of bilayer metal gate by...

Journal of Applied Physics 2017 / 09 Vol. 122; Iss. 9

Tuning of the work function of bilayer metal gate by in-situ atomic layer lamellar doping of AlN in TiN interlayer

Huang, Kuei-Wen, Cheng, Po-Hsien, Lin, Yu-Shu, Wang, Chin-I, Lin, Hsin-Chih, Chen, Miin-Jang
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Volume:
122
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.5001129
Date:
September, 2017
File:
PDF, 1.36 MB
english, 2017
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