Characteristics of silicon oxynitride films grown by using...

Thin Solid Films 2017 / 11 Vol. 642

Characteristics of silicon oxynitride films grown by using neutral-beams and inductively coupled plasma

Kim, Jongsik, Kim, Dae Chul, Kim, Young-Woo
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Volume:
642
Language:
english
Journal:
Thin Solid Films
DOI:
10.1016/j.tsf.2017.09.024
Date:
November, 2017
File:
PDF, 827 KB
english, 2017
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