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Theoretical analysis of the mobility of two-dimensional electron gas in the quaternary Al x In y Ga 1-x-y N/GaN heterojunctions limited by the alloy composition fluctuation
Li, Yao, Zhang, Jinfeng, Liu, Guipeng, Quan, Rudai, Duan, Xiaoling, Zhang, Jincheng, Hao, YueVolume:
7
Language:
english
Journal:
AIP Advances
DOI:
10.1063/1.4985825
Date:
October, 2017
File:
PDF, 9.31 MB
english, 2017