Step-free GaN surfaces grown by confined-area metal-organic...

APL Materials 2017 / 09 Vol. 5; Iss. 9

Step-free GaN surfaces grown by confined-area metal-organic vapor phase epitaxy

Shelton, Christopher T., Bryan, Isaac, Paisley, Elizabeth A., Sachet, Edward, Ihlefeld, Jon F., Lavrik, Nick, Collazo, Ramón, Sitar, Zlatko, Maria, Jon-Paul
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Volume:
5
Language:
english
Journal:
APL Materials
DOI:
10.1063/1.4993840
Date:
September, 2017
File:
PDF, 17.66 MB
english, 2017
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