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0.98 μm strained-layer GaInAs/GaInAsP/GaInP quantum well lasers
Zhang, G., Näppi, J., Ovtchinnikov, A., Savolainen, P., Asonen, H.Volume:
28
Year:
1992
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el:19921393
File:
PDF, 183 KB
english, 1992