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Improvement in negative bias illumination stress stability of In-Ga-Zn-O thin film transistors using HfO2 gate insulators by controlling atomic-layer-deposition conditions
Na, So-Yeong, Kim, Yeo-Myeong, Yoon, Da-Jeong, Yoon, Sung-MinLanguage:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/1361-6463/aa9489
Date:
October, 2017
File:
PDF, 1.35 MB
english, 2017