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Improvement of Device Reliability by Introducing a...

IEEE Electron Device Letters 2017 / 10 Vol. 38; Iss. 10

Improvement of Device Reliability by Introducing a BEOL-Compatible TiN Barrier Layer in CBRAM

Cao, Rongrong, Liu, Sen, Liu, Qi, Zhao, Xiaolong, Wang, Wei, Zhang, Xumeng, Wu, Facai, Wu, Quantan, Wang, Yan, Lv, Hangbing, Long, Shibing, Liu, Ming
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Volume:
38
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2017.2746738
Date:
October, 2017
File:
PDF, 1.16 MB
english, 2017
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