Ultra-high voltage electron microscopy investigation of...

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Microelectronics Reliability 2017 / 10

Ultra-high voltage electron microscopy investigation of irradiation induced displacement defects on AlGaN/GaN HEMTs

Sasaki, Hajime, Hisaka, Takayuki, Kadoiwa, Kaoru, Oku, Tomoki, Onoda, Shinobu, Ohshima, Takeshi, Taguchi, Eiji, Yasuda, Hidehiro
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Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2017.10.005
Date:
October, 2017
File:
PDF, 2.74 MB
english, 2017
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