Dopant passivation occurring during electron cyclotron...

Electronics Letters 1995 / 03 Vol. 31; Iss. 5

Dopant passivation occurring during electron cyclotron resonance (ECR) CH4/H2 dry etching of InGaAs/AlInAs HEMTs

Sivco, D.L., Kuo, J.M., Pearton, S.J., Ren, F., Cho, A.Y., Wilson, R.G., Chen, Y.K., Lothian, J.R.
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Volume:
31
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el:19950284
Date:
March, 1995
File:
PDF, 313 KB
english, 1995
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