Study on the Heat Transfer of GaN-Based High Power HEMTs

IEEE Transactions on Semiconductor Manufacturing 2017 / 11 Vol. 30; Iss. 4

Study on the Heat Transfer of GaN-Based High Power HEMTs

Yang, Lianqiao, Chen, Zhangfu, Xu, Xiaoxue, Zhang, Jianhua
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Volume:
30
Language:
english
Journal:
IEEE Transactions on Semiconductor Manufacturing
DOI:
10.1109/TSM.2017.2739134
Date:
November, 2017
File:
PDF, 730 KB
english, 2017
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