Temperature and Bias Dependent Trap Capture Cross Section...

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IEEE Transactions on Electron Devices 2017

Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer

Kumar, Sandeep, Gupta, Priti, Guiney, Ivor, Humphreys, Colin J., Raghavan, Srinivasan, Muralidharan, R., Nath, Digbijoy N.
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Year:
2017
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2017.2757516
File:
PDF, 1.86 MB
english, 2017
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